optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/08 page 1 of 3 hermetic infrared emitting diode op215, op216 applications: ? non-contact reflecti ve object sensor ? assembly line automation ? machine automation ? machine safety ? end of travel sensor ? door sensor description: each op215 and op216 device is an 890 nm gallium aluminum arsenide infrared emi tting diode (gaaias), mounted in a hermetically sealed ?pig tale? package with an enhanced temperature range and a narrow irradiance pattern that provides high on-axis intensity for excellent coupling efficiency. these devices offer significantly higher power output than gaas at equivalent drive currents and have a wavelength that is matched to silicon?s peak response. their small package size pe rmits high device density mounting. the op216 series devices provide an additional mounting tab connected to the cathode/case. all these leds are mechanically and spectrally matc hed to the op300 series, op516, op600 series and op640 series devices. please refer to application bulletins 208 and 210 for additional design information and reliability (degradation) data, and to application bulletin 202 for pill-type soldering to pcboard. features: ? hermetically sealed package ? mechanically and spectrally matched to other optek devices ? designed for direct mount to pcboard ? enhanced temperature range ? excellent coupling efficiency ordering information led peak wavelength optical power mw/cm 2 (min) total beam angle op215a op216a 890 mm 1.20 24 op215b OP216B 0.60 op215c op216c 0.30 op215d op216d 0.20 part number rohs 1 2 pin # led 1 anode 2 cathode op215 op216
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/08 page 2 of 3 hermetic infrared emitting diode op215, op216 absolute maximum ratings (t a =25c unless otherwise noted) storage temperature range -65 o c to +150 o c reverse voltage 2.0 v continuous forward current 100 ma peak forward current (2s pulse with 0.1% duty cycle) 1.0 a lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 c (1)(2) power dissipation 150 mw (3) operating temperature range -65 o c to +125 o c notes: 1. refer to application bulletin 202 which reviews proper soldering techniques for pill-type devices. 2. no clean or low solids. rma flux is recommended. durati on can be extended to 10 seconds maximum when flow soldering. 3. derate linearly 1.50 mw/ c above 25 c. 4. for op216, e e(apt) is a measurement using a 0.180? (4.57 mm) diameter apert ured sensor placed 0.653? (16.59 mm) from the lens tip. e e(apt) is not necessarily uniform within the measured area. electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions input diode e e (apt) (3) apertured radiant incidence op216a OP216B op216c op216d 1.20 0.60 0.30 0.20 - - mw/cm 2 i f = 50 ma (4) v f forward voltage - - 1.80 v i f = 50 ma i r reverse current - - 100 a v r = 2.0 v p wavelength at peak emission - 890 - nm i f = 10 ma b spectral bandwidth between half power points - 80 - nm i f = 10 ma ? p / ? t spectral shift with temperature - +0.18 - nm/c i f = constant hp emission angle at half power points - 24 - degree i f = 50 ma t r output rise time - 500 - ns t f output fall time - 250 - ns i f(pk) =100 ma, pw=10 s, and d.c.=10.0%
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a 06/08 page 3 of 3 hermetic infrared emitting diode op215, op216 op215 & op216 forward voltage vs forward current vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 5 10 15 20 25 30 35 40 45 50 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120c optical power vs i f vs temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 5 10 15 20 25 30 35 40 45 50 forward current i f (ma) normalized optical power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20 c distance vs output power vs forward current 0 1 2 3 4 5 6 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma 90 ma 100 ma normalized at 1" and 50 m a forward current normalized intensity vs beam angle 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -45 -35 -25 -15 -5 5 15 25 35 45 normalized intensity angular displacement ( degrees)
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